The Physical Properties of Thermal Expansion of Solid Matter
Issue:
Volume 11, Issue 5, September 2022
Pages:
79-84
Received:
12 August 2022
Accepted:
13 September 2022
Published:
28 September 2022
DOI:
10.11648/j.ajmp.20221105.11
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Views:
Abstract: Thermal expansion is the tendency of matter to change shape, area, and volume in responses to change in temperature. The main objective is to review the thermal expansion of the solid state and its application. This study reviews the thermal expansion of solid state and its applications. The research revues thermal expansion of phases by collecting deferent information from different reference books and also discussed about the next out comes: Thermal expansion of phases is important for building and to bend different material. In this case expansions dap or join on a hot day consecrate in run way Sections in airport expands and this cause cracking to solve this problem. Leave small gap between sections, in anti – scaling values bimetallic strip when the bi metal strip. Is heated they expands more than invar this makes the strip bends with brass on the out sides of the curve, when the bimetal strips heated it curves and breaks contact then temperature reaches a cot value. Thermal expansion of status measurements of temperatures unites of temperature, expansion of solids, and its application. Based on the literature review about thermal expansion of solids: the factors that affecting thermal expansion of solids original length (direct), temperature (direct), material type. Solids in general have the smallest expansively while gases have the greatest expansively and liquids lie in between. Thermal the expansion of phases is important for building and to bend different material. In this case expansion dap or join, on the day concentrate in run way sections in airport expands and this cause cracking to solve this problem.
Abstract: Thermal expansion is the tendency of matter to change shape, area, and volume in responses to change in temperature. The main objective is to review the thermal expansion of the solid state and its application. This study reviews the thermal expansion of solid state and its applications. The research revues thermal expansion of phases by collecting...
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Phonon Effect with Short Drain and Source in Nanowires DGMOSFET SI
Abderrezak Bekaddour,
Gérard Ghibaudo
Issue:
Volume 11, Issue 5, September 2022
Pages:
85-91
Received:
26 June 2022
Accepted:
11 July 2022
Published:
28 September 2022
DOI:
10.11648/j.ajmp.20221105.12
Downloads:
Views:
Abstract: Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance and power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this paper, we propose the application of a symmetric Double Gate (SDG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average subthreshold slope, the nature of the output characteristics and the immunity against the DIBL effects. We demonstrate that if appropriate work-functions are chosen for the gate materials on the source side and the drain side, the tunnel field effect transistor shows a significantly improved performance. We apply the technique of SDG in a Strained Double Gate Tunnel Field Effect Transistor with an Oxide gate dielectric to show an overall improvement in the characteristics of the device along with achieving a good on-current and an excellent average subthreshold slope. The results show that the SDG technique can be applied to TFETs with different channel materials, channel lengths, gate-oxide materials, gate-oxide thicknesses and power supply levels to achieve significant gains in the overall device characteristics. The on-current of these devices is mainly limited by the tunneling barrier properties, and phonon scattering has only a moderate effect.
Abstract: Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance and power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this paper, we propose the application of a symmetric Double Gate (...
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